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| Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB applications GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT168 Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current BT168GW Passivated, sensitive gate thyristor in a plastic envelope suitable for surface mounting, intended for use in Residual Current Devices/ Ground Fault Interrupters/ Leakage Current Circuit Breakers (RCD/ GFI/ LCCB) applications where a minimum IGT limit is needed. This devices may be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. MAX. GW 600 0.6 1 8 UNIT V A A A PINNING - SOT223 PIN 1 2 3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURATION 4 SYMBOL a k 1 2 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tsp 112 C all conduction angles t = 10 ms t = 8.3 ms half sine wave; Tj = 25 C prior to surge t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/s -40 MAX. 6001 0.63 1 8 9 0.32 50 1 5 5 2 0.1 150 125 UNIT V A A A A A2s A/s A V V W W C C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. September 2001 1 Rev 1.000 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-a PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient CONDITIONS MIN. pcb mounted, minimum footprint pcb mounted, pad area as in fig:14 TYP. 156 70 BT168GW MAX. 15 - UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 10 mA; gate open circuit VD = 12 V; IGT = 0.5 mA; RGK = 1 k VD = 12 V; IGT = 0.5 mA; RGK = 1 k IT = 2 A VD = 12 V; IT = 10 mA; gate open circuit VD = VDRM(max); IT = 10 mA; Tj = 125 C; gate open circuit VD = VDRM(max); VR = VRRM(max); Tj = 125 C; RGK = 1 k MIN. 20 0.2 TYP. 50 2 2 1.35 0.5 0.3 0.05 MAX. 200 6 5 1.5 0.8 0.1 UNIT A mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 1 k ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/s; dVD/dt = 2 V/s; RGK = 1 k MIN. 500 TYP. 800 2 100 MAX. UNIT V/s s s September 2001 2 Rev 1.000 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications BT168GW 1 Ptot / W conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 Tsp(max) / C a = 1.57 1.9 2.2 2.8 4 110 10 ITSM / A IT I TSM 0.8 113 8 time T Tj initial = 25 C max 0.6 116 6 0.4 119 4 0.2 122 2 0 0 0.1 0.2 0.3 0.4 IF(AV) / A 0.5 0.6 125 0.7 0 1 10 100 Number of half cycles at 50Hz 1000 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). ITSM / A Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. 1000 2 IT(RMS) / A 1.5 100 1 10 IT T I TSM time 0.5 Tj initial = 25 C max 1 10us 100us T/s 1ms 10ms 0 0.01 0.1 1 10 surge duration / s Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 10ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tsp 112C. VGT(Tj) VGT(25 C) 1.2 1 0.8 0.6 0.4 0.2 IT(RMS) / A BT134W 1.6 112 C 1.4 1.2 1 0.8 0.6 0 50 Tsp / C 100 150 0 -50 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible rms current IT(RMS) , versus solder point temperature Tsp. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. September 2001 3 Rev 1.000 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications BT168GW 3 2.5 2 1.5 IGT(Tj) IGT(25 C) 5 IT / A Tj = 125 C Tj = 25 C 4 Vo = 1.0 V Rs = 0.27 Ohms 3 typ max 2 1 1 0.5 0 -50 0 0 0.5 1 VT / V 1.5 2 2.5 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 100 Zth j-sp (K/W) BT169W 3 2.5 2 1.5 1 0.5 10 1 P D tp 0.1 t 0 -50 0 50 Tj / C 100 150 0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj, RGK = 1 k. IH(Tj) IH(25 C) Fig.11. Transient thermal impedance Zth j-sp, versus pulse width tp. dVD/dt (V/us) 10000 3 2.5 RGK = 1 kohms 1000 2 1.5 1 0.5 0 -50 10 0 50 100 150 100 0 50 Tj / C 100 150 Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj, RGK = 1 k. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. September 2001 4 Rev 1.000 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications MOUNTING INSTRUCTIONS BT168GW Dimensions in mm. 3.8 min 1.5 min 2.3 1.5 min (3x) 6.3 1.5 min 4.6 Fig.13. soldering pattern for surface mounting SOT223. PRINTED CIRCUIT BOARD Dimensions in mm. 36 18 60 9 4.6 4.5 10 7 15 50 Fig.14. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick). September 2001 5 Rev 1.000 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications MECHANICAL DATA Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 BT168GW D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 96-11-11 97-02-28 Fig.15. SOT223 surface mounting package. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to Discrete Semiconductor Packages, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". September 2001 6 Rev 1.000 Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB Applications BT168GW DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 Objective data PRODUCT STATUS3 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. September 2001 7 Rev 1.000 |
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